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Charge trapping memory based on 2D materials heterostructures

유영준 교수

충남대학교 물리학과

Charge trapping memory based on 2D materials heterostructures

 

Young-Jun Yu1,*

 

1Department of Physics, Chungnam National University

*yjyu@cnu.ac.kr

 

Van der Waals (vdW) heterostructures using two dimensional (2D) atomic crystals have been attracted intensely for high performance as well as low-power memory applications. Furthermore, floating-gate (FG) memory devices based on 2D heterostructures exhibit stability with dielectric barriers such as hexagonal boron nitride (hBN) between semiconductors and various charge storage layers. However, the reported operation voltage and energy consumption for hBN barriers cannot be reduced below several tens of volts. In this presentation, I will introduce ultrahigh energy efficiency of 2D material heterostructure-based memory devices for approaching to the biological synaptic energy level with employing ultrathin charge-trap layer underneath 2D semiconductor channel measured by scanning Kelvin probe microscopy.