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Unconventional micro-/nanofabrication via high temperature annealing

이정철 교수

한국과학기술원(KAIST) 기계공학과

Unconventional micro-/nanofabrication via high temperature annealing

 

Jungchul Lee* and Taeyeong Kim

 

Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology

291 Daehak-ro, Yuseong-gu, Daejeon, South Korea

*jungchullee@kaist.ac.kr

 

 

In integrated circuits (IC) and micro-/nanoelectromechanical systems (MEMS/NEMS), annealing is commonly employed to relieve stress, relocate or activate dopants and heal implant damage for semiconductor materials and to activate the interfacial reaction of metal contacts. It's interesting to note that for pre-structured semiconductor materials, annealing can cause shape evolution, or morphological change, towards the minimization of surface energy. Consequently, standard etching and post-annealing procedures can be used to create unique semiconductor micro-/nanostructures. Here, we introduce membrane-cavity and pedestal sphere structures, which are the end product of annealing semiconductor materials at high temperature, and discusses the technical uses of them.